Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation

作者：Miyagawa Chihiro^*; Kobayashi Takumi; Taishi Toshinori; Hoshikawa Keigo

来源：Journal of Crystal Growth, 2014, 402: 83-89.

DOI：10.1016/j.jcrysgro.2014.04.030

• Computer simulation
• Single crystal growth
• Bridgman technique
• Growth from melt
• Sapphire

Based on the growth of 3-inch diameter c-axis sapphire using the vertical Bridgman (VB) technique, numerical simulations were made and used to guide the growth of a 6-inch diameter sapphire. A 2D model of the VB hot-zone was constructed, the seeding interface shape of the 3-inch diameter sapphire as revealed by green laser scattering was estimated numerically, and the temperature distributions of two VB hot-zone models designed for 6-inch diameter sapphire growth were numerically simulated to achieve the optimal growth of large crystals. The hot-zone model with one heater was selected and prepared, and 6-inch diameter c-axis sapphire boules were actually grown, as predicted by the numerical results.

• 出版日期2014-9-15