摘要
Some asynchronous circuit techniques are proposed to provide a new approach to Single Event Effect (SEE) tolerance in synchronous circuits. Two structures, Double Modular Redundancy (DMR) and Temporal Spatial Triple Modular Redundancy with Dual Clock Triggered Register (TSTMR-D), are presented. Three SEE tolerant 8051 cores with DMR, TSTMR-D and traditional Triple Modular Redundancy (TMR) are implemented in SMIC 0.35 mu m process. The results of fault injection experiments indicate that DMR has a relatively low overhead on both area and latency than TMR, while tolerates SEU in sequential logic. TSTMR-D provides tolerance for both SEU and SET with reasonable area and latency overhead.
- 出版日期2008-6
- 单位中国人民解放军国防科学技术大学