A Common Framework of NBTI Generation and Recovery in Plasma-Nitrided SiON p-MOSFETs

作者：Deora S^*; Maheta V D; Islam A E; Alam M A; Mahapatra S

来源：IEEE Electron Device Letters, 2009, 30(9): 978-980.

DOI：10.1109/LED.2009.2026436

• Generation
• hole trapping
• interface trap generation
• negative bias temperature instability (NBTI)
• p-MOSFET
• recovery

Generation and recovery of degradation during and after negative bias temperature instability (NBTI) stress are studied in a wide variety of plasma-nitrided (PN) silicon oxynitride (SiON) p-MOSFETs. An ultrafast on-the-fly linear drain current (I-DLIN) technique, which is capable of measuring the shift in threshold voltage from very short (approximately in microseconds) to long (approximately in hours) stress/recovery time, is used. The mechanics of NBTI generation and recovery are shown to be strongly correlated and can be consistently explained using the framework of an uncorrelated sum of a fast and weakly temperature (T)-dependent trapped-hole (Delta V-h) component and a relatively slow and strongly T-activated interface trap (Delta V-IT) component. The SiON process dependences are attributed to the difference in the relative contributions of Delta V-h and Delta V-IT to the overall degradation (Delta V-T), as dictated by the nitrogen (N) content and thickness of the gate insulator.

• 出版日期2009-9