Design Consideration of Magnetic Tunnel Junctions for Reliable High-Temperature Operation of STT-MRAM

作者：Lee Kangho^*; Kang Seung H

来源：IEEE Transactions on Magnetics, 2010, 46(6): 1537-1540.

DOI：10.1109/TMAG.2010.2043645

• Magnetic tunnel junction
• read disturb
• switching current
• thermal stability

Commercializing spin-transfer-torque magnetic random access memory (STT-MRAM) requires thorough investigation of magnetic tunnel junctions (MTJs) at temperature corners. In this paper, high-temperature behaviors of MTJs are investigated in conjunction with temperature-dependent transistor characteristics in order to ensure reliable high-temperature operation of STT-MRAM.

• 出版日期2010-6