Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering

作者：Prtljaga Nikola^*; Navarro Urrios Daniel; Tengattini Andrea; Anopchenko Aleksei; Ramirez Joan Manel; Rebled Jose Manuel; Estrade Sonia; Colonna Jean Philippe; Fedeli Jean Marc; Garrido Blas; Pavesi Lorenzo

来源：Optical Materials Express, 2012, 2(9): 1278-1285.

DOI：10.1364/OME.2.001278

We have fabricated a series of thin (similar to 50 nm) erbium-doped (by ion implantation) silicon-rich oxide films in the configuration that mitigates previously proposed mechanisms for loss of light emission capability of erbium ions. By combining the methods of optical, structural and electrical analysis, we identify the erbium ion clustering as a driving mechanism to low optical performance of this material. Experimental findings in this work clearly evidence inadequacy of the commonly employed optimization procedure when optical amplification is considered. We reveal that the significantly lower erbium ion concentrations are to be used in order to fully exploit the potential of this approach and achieve net optical gain.

• 出版日期2012-9-1
• 单位中国地震局