Diluting and annealing effects on electromigration and morphology of chemical vapor-deposited copper films

作者：Wu S; Li XF; Liu X; Wang Q^*

来源：Vacuum, 2006, 80(8): 850-854.

DOI：10.1016/j.vacuum.2005.10.007

• copper film
• MOCVD
• silicon substrate
• annealing
• diluting
• electromigration
• morphology

The crystallization and orientation of chemical vapor-deposited copper films were investigated by means of X-ray diffraction. The ratios of Cu (1 1 1) peak intensity to Cu (2 0 0) [I(1 1 1)/I(2 0 0)] of the film deposited at different temperatures were plotted as a function of temperature. Then it can be found that the ratio of I(I 1 1)11(2 0 0) increased with the deposition temperature, and 400 degrees C is the best one for electromigration when the films are grown in diluting N-2, and/or annealing by N-2 or by H-2. In addition, the morphology of copper films was characterized by atomic force microscopy, and it was found that the smoothness of the films grown in diluting N-2 and/or annealing by N-2 are improved, while the films annealing by H-2 have no significant changes.

• 出版日期2006-6-9
• 单位浙江大学