摘要
We propose a novel Schottky and impedance spectroscopy (IS) numerical model to evaluate carrier injection and transport behavior of organic semiconductor materials. Using temperature-dependent current-voltage (I-V) and IS measurements of hole-only (HOD) and electron-only (EOD) devices and phosphorescent blue organic light emitting diodes (OLEDs), we have obtained values for the Richardson factor, the barrier height, trap density, density of states (DOS), and carrier mobility of organic materials and interfaces as device parameters. Therefore, we approach to degradation mechanism of the emitting zone inside of the OLEDs.
- 出版日期2013-4
- 单位CSIRO