An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O-3 thin film capacitor using the switching transient current measurements

作者：Kim Gun Hwan; Lee Hyun Ju; Jiang An Quan; Park Min Hyuk; Hwang Cheol Seong^*

来源：Journal of Applied Physics, 2009, 105(4): 044106.

DOI：10.1063/1.3078104

• charge injection
• dielectric hysteresis
• dielectric polarisation
• ferroelectric capacitors
• ferroelectric switching
• ferroelectric thin films
• lead compounds
• platinum
• thin film capacitors
• zirconium compounds

This study examined the imprint mechanism of a ferroelectric Pt/Pb(Zr,Ti)O-3(150-nm-thick)/Pt capacitor using pulse switching transient current measurements. The progression of the imprint was well explained by the propagation of a localized charge injection area, where there was an increase in coercive voltage and interfacial capacitance over the entire capacitor area. The as-received samples exhibited uniform interfacial capacitance over the total area. Charge injection resulted in a more rectified remanent polarization-applied voltage relationship compared with the as-received sample. Analytic functional forms for the switching charge and local switching area were also derived.

• 出版日期2009-2-15
• 单位复旦大学