摘要

The possibilities to grow crystalline complex InTaO4, InNbO4 and InVO4 coatings as well as single oxide layers In2O3, Ta2O5, Nb2O5, and VOx were investigated using aerosol assisted atmospheric pressure chemical vapour deposition technique. Indium(III) and niobium(IV) tetramethylheptanedionates, tantalum(V) tetraethoxyacethylacetonate and vanadium(III) acethylacetonate were used as precursors, monoglyme and toluene as solvents. The influence of deposition conditions and solution composition on elemental and phase compositions of layers was studied. Indium tantalate layers containing pure monoclinic InTaO4 phase were obtained ex-situ, i.e., after high-temperature (800 degrees C) annealing of layers grown at lower temperature (500 degrees C). Films containing pure orthorhombic indium vanadate or monoclinic indium niobate phase may be prepared using both in-situ (600 degrees C) or ex-situ (deposition at 400 degrees C, annealing at 800 degrees C) approaches. Under optimised deposition conditions and solution compositions, Ni-doped InVO4 and InTaO4 films were also deposited and their photocatalytic activity was tested.

  • 出版日期2010-8-25