A novel structure to improve DIBL in fully-depleted silicon-on-diamond substrate

作者：Daghighi Arash^*

来源：Diamond and Related Materials, 2013, 40: 51-55.

DOI：10.1016/j.diamond.2013.10.010

• Silicon-on-insulator
• Drain induced barrier lowering
• Silicon-on-diamond
• Fully depleted
• Hydrodynamic model
• MOSFET

In this paper, a novel silicon-on-diamond (SOD) MOSFET structure is proposed. The new structure eliminates the degraded drain induced barrier lowering (DIBL) inherently observed in SOD devices. A second insulating layer over the buried diamond layer is integrated which partially covers the diamond layer. An expression for the total body capacitance through the insulating layers is obtained. Using analytical model, the second insulating layer dimensions are computed. In order to evaluate the impact of second insulating layer on the device characteristics, hydrodynamic numeric analysis is performed. Device simulation results verified the analytical model in DIBL improvement. Maximum lattice temperature of the new structure is well below SOI device and 5% higher in comparison with SOD substrate. The device simulation results demonstrate short channel effects improvement and suppressed self-heating effects.

• 出版日期2013-11