First-Principles Study of Silicon Nanowire Approaching the Bulk Limit

作者：Ng Man Fai^*; Sullivan Michael B; Tong Shi Wun; Wu Ping

来源：Nano Letters, 2011, 11(11): 4794-4799.

DOI：10.1021/nl2026212

• Silicon nanowire
• DFT
• band structure
• radial doping profile

First-principles density functional theory calculations on hydrogenated silicon nanowires (SiNWs) with diameters up to 7.3 nm are carried out for comparing experimentally relevant SiNWs and evaluating its radial doping profiles. We show that the direct band gap nature of both the small diameter < 110 > and < 100 > SiNWs fades when the diameter reaches beyond about 4 nm, where the difference of direct and indirect band gaps are close, within the experimental measurement uncertainty of +/- 0.1 eV, suggesting the diameter size where the gap nature transition starts. In addition, we reveal that core-surface boron (B) codoped SiNW forms more preferably at large diameter than that of the surface-surface codoped one, attributing to the lower energy configuration raised by the core B dopant at large diameter SiNW. More importantly, the diameter for such a preferential transition increases as the doping concentration decreases. Our results rationalize photoluminescent measurements and radial doping distributions of SiNWs.

• 出版日期2011-11