摘要

A novel solid source was used for fabrication of high quality ZnO thin film on silicon (100) by single source chemical vapor deposition (SSCVD). The ZnO films were characterized by Fourier transform infrared spectroscopy and thermo gravimetric analysis, proving that the solid source is with the chemical formula of Zn4(OH)2(O2 CCH3)6&middot2H2O and has volatility and thermolysis properties suitable for the growth of ZnO film by SSCVD. Also, the ZnO films were evaluated X-ray diffraction, scanning electronic microscope, X-ray photoelectron spectroscopy, and photoluminescence measurement. The results demonstrate that the films are of high quality.

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