A Reliable Si3N4/Al2O3-HfO2 Stack MIM Capacitor for High-Voltage Analog Applications

作者：Ho Ching Sung^*; Chang San Jung; Chen Shih Chang; Liou Juin J; Li Hongge

来源：IEEE Transactions on Electron Devices, 2014, 61(8): 2944-2949.

DOI：10.1109/TED.2014.2332046

• Atomic layer deposition (ALD)
• capacitance density
• high-k
• laminated Al2O3-HfO2 (LAHO) insulator
• metal-insulator-metal (MIM) capacitor
• time-dependent dielectric breakdown (TDDB)
• voltage linearity

In this paper, we propose for the first time an attractive Si3N4/laminated Al2O3-HfO2 (LAHO) stack metal-insulator-metal (MIM) capacitor with a low-leakage characteristic, good voltage linearity, high capacitance density, and excellent time-dependent dielectric breakdown (TDDB) reliability. The capacitor demonstrates a capacitance density of 4.2 fF/mu m(2), quadratic voltage coefficients (alpha) of 106 ppm/V-2, and 18.92-year TDDB lifetime under a stressing voltage of 6.6 V. For the extended performance, it is projected that such a capacitor can possess a maximum capacitance density of 4.13 fF/mu m(2) with alpha <= 100 ppm/V-2 and TDDB lifetime of 10 years under an analog operation of 7 V. Furthermore, this paper shows that a and TDDB lifetime of the new capacitor are very sensitive to the thickness of the Si3N4 film. Comparison of the new MIM capacitors with the SiO2/HfO2 stack MIM capacitors shows that the SiO2/HfO2 capacitor is more suitable for low-voltage applications, whereas the new Si3N4/LAHO capacitor is superior for operations requiring a higher biasing condition.

• 出版日期2014-8
• 单位北京航空航天大学