Analytical modeling of surface accumulation behavior of fully depleted SOI four gate transistors (G(4)-FETs)

作者：Sayed Shehrin^*; Khan M Ziaur Rahman

来源：Solid-State Electronics, 2013, 81: 105-112.

DOI：10.1016/j.sse.2012.12.004

• Four gate transistor
• 2-D Poisson's equation
• Surface potential
• Drain current
• Transconductance
• Accumulation capacitance

A charge sheet model is proposed to analyze the transistor characteristics of fully depleted SOI four gate field effect transistors (G(4)-FETs). The model is derived assuming a parabolic potential variation between the junction-gates and by solving 2-D Poisson's equation. The proposed model facilitates the calculation of surface potential and charge densities as a function of all gate biases. Modifying this charge sheet model for non-equilibrium condition, current-voltage and capacitance-voltage characteristics are also analyzed. Different back surface charge conditions are considered for each analysis. The models are compared with 3-D Silvaco/Atlas simulation results which show good agreement.

• 出版日期2013-3