A Novel BJT Structure Implemented Using CMOS Processes for High-Performance Analog Circuit Applications

作者：Jung Yi Jung; Park Byoung Seok; Kwon Hyuk Min; Kwon Sung Kyu; Jang Jae Hyung; Kwak Ho Young; Chung Yi Sun; Lee Jung Hwan; Lee Hi Deok^*

来源：IEEE Transactions on Semiconductor Manufacturing, 2012, 25(4): 549-554.

DOI：10.1109/TSM.2012.2192749

• Analog performance
• CMOSFET
• matching coefficient
• parasitic BJT

In this paper, a novel bipolar junction transistor (BJT) structure is proposed for high matching characteristics and its performance is compared with a conventional BJT structure. Although the proposed BJT matching structure indicates a decrease of collector current density J(C) and current gain beta of about 5.36% and 1.02% compared with those of the conventional BJT structure, the matching characteristics of the collector current (A(IC)) and the current gain (A(beta)) for the proposed structure are improved by about 31% and 24%. The improved matching characteristic of the proposed structure is believed to be due to the reduced effect of the deep n-well or the reduced current path from emitter to collector.

• 出版日期2012-11