Analog Circuit Design Using Tunnel-FETs

作者：Sedighi Behnam^*; Hu Xiaobo Sharon; Liu Huichu; Nahas Joseph J; Niemier Michael

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2015, 62(1): 39-48.

DOI：10.1109/TCSI.2014.2342371

• Amplifiers
• analog circuits
• benchmark testing
• nanoscale devices
• sampled-data circuits
• tunneling devices

Tunnel-FET (TFET) is a major candidate for beyond-CMOS technologies. In this paper, the properties of the TFETs that affect analog circuit design are studied. To demonstrate how TFETs can enhance the performance or change the topology of the analog circuits, several building blocks such as operational transconductance amplifiers (OTAs), current mirrors, and track-and-hold circuits are examined. It is shown that TFETs are promising for low-power and low-voltage designs, wherein transistors are biased at low-to-moderate current densities. Comparing 14-nm III-V TFET-based OTAs with Si-MOSFET-based designs demonstrates up to 5 times reduction in the power dissipation of the amplifiers and more than an order of magnitude increase in their DC voltage gain. The challenges and opportunities that come with the special characteristics of TFETs, namely asymmetry, ambipolar behavior, negative differential resistance, and superlinear operation are discussed in detail.

• 出版日期2015-1