Dual-Gate Field-Effect Transistor Hydrogen Gas Sensor with Thermal Compensation

作者：Tsukada Keiji^*; Kariya Masatoshi; Yamaguchi Tomiharu; Kiwa Toshihiko; Yamada Hironobu; Maehara Tsuneyoshi; Yamamoto Tadayoshi; Kunitsugu Shinsuke

来源：Japanese Journal of Applied Physics, 2010, 49(2): 024206.

DOI：10.1143/JJAP.49.024206

We developed a dual-gate field-effect transistor (FET) hydrogen gas sensor for application to hydrogen vehicles. The dual-gate FET hydrogen sensor was integrated with a Pt-gate FET to detect hydrogen and a Ti-gate FET as the reference sensor in the same Si chip. The Ti-FET had the same structure as the Pt-FET except for the gate metal. The Pt-FET showed a good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the temperature range from room temperature to 80 degrees C because of the same temperature dependence of the current-voltage (I-V) characteristics. In addition, the temperature of the integrated hydrogen sensor was controlled by an integrated system consisting of a heater and a thermometer at any given temperature under severe weather conditions.

• 出版日期2010