科研之友
微信
新浪微博
Facebook
分享链接
摘要
A direct numerical method was followed to calculate the ideality factor for non-ideal n-Si/p-diamond heterojunction diode. The simulations were carried out at different temperatures from 300 K up to 360 K. Results showed that the ideality factor decreases as the current increases at fixed voltage and temperature. The temperature dependence of the ideality factor was also investigated. Theoretical values of the ideality factor were found to be close to the experimental data of such system.
- 出版日期2010-12
- 单位南宁师范大学
