A pathway to p-type conductivity in (nN, B)-codoped ZnO

作者：Xiong, Zhihua^*; Chen, Lanli; Zheng, Changda; Luo, Lan; Wan, Qixin

来源：Scripta Materialia, 2010, 63(11): 1069-1072.

DOI：10.1016/j.scriptamat.2010.08.002

• Defects in semiconductors
• Electronic structure
• Electrical properties
• First-principle calculation

Based on first-principles calculations, we present a study for p-type ZnO doping. We find that N-B complex cannot realize p-type ZnO because N-B forms a fully passive complex, while N-B-Vzn complex is demonstrated as having a weak p-type conductivity under O-rich conditions. Interestingly, we further find that 3N-B complex is a stable acceptor that has shallower transition level and lower formation energy under Zn-rich conditions. We expect this study to be helpful in synthesizing good p-type ZnO by controlling (N, B) codoping.

• 出版日期2010-11
• 单位江西科技师范大学; 南昌大学