科研之友
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摘要
In ferroelectric films, the resistance switching (RS) and ferroelectric photovoltaic effects are ideal for developing next-generation electronic devices, especially memory devices. In this work, a feasible electric-optical memory prototype based on both effects is proposed, which can operate with electric writing and optical reading, and realized in Ti-doped BiFeO3 films. The RS behavior and the photovoltaic effect at different stage of RS are measured carefully. The results show that the films exhibit filament-type RS effect. Furthermore, the photovoltaic open-circuit voltage is demonstrated to be well controlled by switching the resistance state, and such a manipulation can be repeated reliably. By carrying out first-principles calculations, the working mechanism of the devices is further analyzed, which reveals that the doping of Ti plays a crucial role in the occurrence of the filament-type RS effect and the improvement of photovoltaic effect. This work provides a feasible avenue to develop high-performance and low-power-consumption memory devices.
