High Performance and Stable Flexible Memory Thin-Film Transistors Using In-Ga-Zn-O Channel and ZnO Charge-Trap Layers on Poly(Ethylene Naphthalate) Substrate

作者：Kim So Jung; Park Min Ji; Yun Da Jeong; Lee Won Ho; Kim Gi Heon; Yoon Sung Min^*

来源：IEEE Transactions on Electron Devices, 2016, 63(4): 1557-1564.

DOI：10.1109/TED.2016.2531087

• Charge-trap memory
• flexible electronics
• flexible substrate
• oxide semiconductor
• thin-film transistor (TFT)

A flexible charge-trap-type memory (f-CTM) thin-film transistor was proposed and fabricated on poly(ethylene naphthalate) (PEN) substrate. All the fabrication process temperature was suppressed below 180 degrees C. To improve the surface roughness and water vapor transmission rate of the PEN substrate, the organic/inorganic hybrid barrier layer was introduced. The gate-stack was composed of all oxide layers, such as In-Ga-Zn-O active channel, ZnO charge-trap layer, Al2O3 blocking/tunneling layers, and In-Sn-O transparent electrode, in which double-layered tunneling and top-protection layers were designed, so that the f-CTMs could exhibit stable and excellent device performance. As results, wide memory margin (25.6 V), fast programming speed (similar to 500 ns), and long retention time (>3 h) were obtained at room temperature and at 80 degrees C. Furthermore, these memory device characteristics were not degraded even after the delamination of PEN substrate and under the bending situation with a given curvature radius (3.3 mm).

• 出版日期2016-4