Disorder Driven Metal-Insulator Transition in BaPb1-xBixO3 and Inference of Disorder-Free Critical Temperature

作者：Luna Katherine^*; Giraldo Gallo Paula; Geballe Theodore; Fisher Ian; Beasley Malcolm

来源：Physical Review Letters, 2014, 113(17): 177004.

DOI：10.1103/PhysRevLett.113.177004

We performed point-contact spectroscopy tunneling measurements on single crystal BaPb1-xBixO3 for 0 <= x <= 0.28 at temperatures T = 2-40 K and find a suppression in the density of states at low bias voltages that is characteristic of disordered metals. Both the correlation gap and the zero-temperature conductivity are zero at a critical concentration x(c) = 0.30. Not only does this suggests that a disorder driven metal-insulator transition occurs before the onset of the charge disproportionated charge density wave insulator, but we also explore whether a scaling theory is applicable. In addition, we estimate the disorder-free critical temperature and compare these results to Ba1-xKxBiO3.

• 出版日期2014-10-21