Superconductivity in high-pressure SiH(4)

作者:Yao Y*; Tse J S; Ma Y; Tanaka K
来源:EPL, 2007, 78(3): 37003.
DOI:10.1209/0295-5075/78/37003

摘要

A combination of static and dynamical first-principles electronic calculations of silane, SiH(4), at high pressure has revealed a novel monoclinic structure with C2/ c symmetry. This high-pressure phase is metallic and composed of layers of SiH4 bridged by H bonds. Perturbative linear response calculations at 90 and 125GPa predict large electron-phonon couplings yielding an electron-phonon coupling parameter lambda close to 0.9.