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摘要
To specify the effects of modulating mechanism of Gd substitution on the dielectric properties for Ca1- x Gd x Cu3Ti4O12 system, the XRD, SEM and positron positron annihilation technique have been implemented. The results display that both grain size and vacancy-type defect concentration play important roles in controlling the dielectric properties of CaCu3Ti4O12. The dielectric properties are improved by adding an appropriate amount of Gd additives ( x =0.01) but weakened by higher Gd doping content since this is closely related to the grain size and concentration of vacancy-type defect in the samples.
- 出版日期2017
- 单位郑州大学
