A 2-D Analytical Model for Double-Gate Tunnel FETs

作者：Gholizadeh Mahdi^*; Hosseini Seyed Ebrahim

来源：IEEE Transactions on Electron Devices, 2014, 61(5): 1494-1500.

DOI：10.1109/TED.2014.2313037

• Analytical model
• band-to-band tunneling (BTBT)
• BTBT generation rate
• double-gate (DG) tunnel field effect transistor (TFET)
• electric field
• mobile charge
• Poisson's equation
• subthreshold swing (SS)

This paper presents a 2-D analytic potential model for double-gate (DG) tunnel field effect transistors (TFETs) by solving the 2-D Poisson's equation. From the potential profile, the electric field is derived and then the drain current expression is extracted by analytically integrating the band-to-band tunneling generation rate over the tunneling region. The model well predicts the potential, subthreshold swing (SS), and transfer and output characteristics of DG TFETs. We analyze the dependence of the tunneling current on the device parameters by varying the gate oxide dielectric constant, gate oxide thickness, body thickness, channel length and channel material and also demonstrate its agreement with TCAD simulation results. The SS which describes the switching behavior of TFETs, is derived from the current expression. The comparisons show that the SS of our model well coincides with that of simulations.

• 出版日期2014-5