Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

作者：Tyaginov Stanislav^*; Jech Markus; Franco Jacopo; Sharma Prateek; Kaczer Ben; Grasser Tibor

来源：IEEE Electron Device Letters, 2016, 37(1): 84-87.

DOI：10.1109/LED.2015.2503920

• Hot-carrier degradation
• Si-H bond dissociation
• temperature behavior
• electron-electron scattering
• modeling
• interface traps
• MOSFET

Using our physics-based model for hot-carrier degradation (HCD), we analyze the temperature behavior of HCD in nMOSFETs with a channel length of 44 nm. It was observed that, contrary to most previous findings, the linear drain current change (Delta I-d,I-lin) measured during hot-carrier stress in these devices appears to be lower at higher temperatures. However, the difference between the Delta I-d,I-lin values obtained at different temperatures decreases as the stress voltage increases. This trend is attributed to the single-carrier process of Si-H bond rupture, which is enhanced by the electron-electron scattering. We also consider another important modeling aspect, namely, the vibrational life-time of the Si-H bond, which also depends on the temperature. We finally show that our HCD model can successfully capture the temperature behavior of HCD with physically reasonable parameters.

• 出版日期2016-1