科研之友
微信
新浪微博
Facebook
分享链接
摘要
A novel multibit MoS2 photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large-area MoS2 flakes. The MoS2 photo electronic memory exhibits excellent memory characteristics, including a large programming/erasing current ratio that exceeds 10(7), multilevel data storage of 3 bits (corresponding to eight levels), performance stability over 200 cycles, and stable data retention over 10(4) s.
- 出版日期2016-11-2
