A clear-cut understanding of the current-gain peak in HEMTs: Theory and experiments

作者：Crupi Giovanni^*; Raffo Antonio; Schreurs Dominique M M P; Avolio Gustavo; Caddemi Alina; Vannini Giorgio

来源：Microwave and Optical Technology Letters, 2012, 54(12): 2801-2806.

DOI：10.1002/mop.27192

• current-gain peak
• equivalent circuit
• high electron-mobility transistor
• microwave frequencies
• output reflection coefficient

The aim of this article is to provide a clear-cut understanding of the origin of the current-gain peak (CGP) affecting the microwave behavior of high electron mobility transistors (HEMTs). This effect consists of a sudden increase of the magnitude of the short circuit current-gain at a given value of the frequency. The present study demonstrates that the CGP can be attributed to the resonance associated to the transition from a capacitive to an inductive behavior of the open circuit output impedance, as confirmed through an extensive experimental analysis. In particular, the CGP is analyzed in HEMT devices based on both GaAs and GaN technologies and its appearance is investigated with respect to the gate width, bias condition, and ambient temperature.

• 出版日期2012-12