A prototypical nanostructured ZnO/Si light-emitting diode based on the silicon nanoporous pillar array: Carriers transportation properties and white electroluminescence

作者：Song, Yue Li; Jiang, Wei Fen; Ji, Peng Fei; Li, Yong^*; Zhou, Feng Qun; Wen, Nai

来源：Journal of Luminescence, 2017, 192: 734-738.

DOI：10.1016/j.jlumin.2017.07.065

• Zinc Oxide
• Nanostructured materials
• Electrical properties
• Electroluminescence

Nanostructured ZnO/Si heterojunctions (ZnO/Si-NPA) has been fabricated through growing nanostructured ZnO on the silicon nanoporous pillar array by using the chemical vapor deposition method. Current density-voltage characteristics of ZnO/Si-NPA show a diode-like rectification behavior with a turn-on voltage of 2.2 V at the current density of 1.0 mA/cm(2) and a forward-to-reverse current ratio of 178.1 at 5.0 V. The carrier transport properties obey the Ohmic law and space-charge-limited-current law at less than and greater than similar to 4.8 V, respectively. The prototypical light emitting diode (LED) based on ZnO/Si-NPA yields a white electroluminescence with the chromaticity coordinates of (0.24, 0.28), correlative color temperature of similar to 20394 K and color rendering index of similar to 89.7. It is believed that this prototypical LED based on ZnO/Si-NPA will be a promising candidate in the field of white light emission.

• 出版日期2017-12
• 单位平顶山学院