科研之友
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摘要
High-quality thin films of topological insulator Bi2Se3 grown on sapphire substrates present a long phase coherence length and allow direct observations of surface quantum oscillations. The key to achieving high mobility of surface electrons is to raise the main deposition temperature to 300-320 degrees C, which necessitates a two-step deposition procedure with the initial epilayer deposited at 110-130 degrees C.
- 出版日期2012-11-2
