摘要
Oxidation of Si1-xGex (x = 0.15, 0.3) nanowires was performed to examine the Ge condensation and agglomeration behaviors of the remaining Si1-yGey (y > x) cores. Si1-xGex nanowires were grown in a furnace and thermally oxidized. Test results were investigated using transmission electron microscopy analysis. With the increase in oxidation time, Ge condensation occurred, after which Si1-yGey cores changed to sphere shapes. The formation of spheres was related to the reduction in the total interfacial energy between the Si1-yGey core and the outer SiO2 layer.
- 出版日期2010