Nonvolatile Memories with Dual-Layer Nanocrystalline ZnO Embedded Zr-Doped HfO2 High-k Dielectric

作者：Lin Chen Han^*; Kuo Yue

来源：Electrochemical and Solid-State Letters, 2010, 13(3): H83-H86.

DOI：10.1149/1.3276055

• amorphous state
• Coulomb blockade
• electron traps
• hafnium compounds
• high-k dielectric thin films
• II-VI semiconductors
• MOS capacitors
• nanoelectronics
• nanofabrication
• nanostructured materials
• random-access storage
• wide band gap semiconductors
• zinc compounds
• zirconium compounds

Metal-oxide-semiconductor memory capacitors composed of dual-layer nanocrystalline ZnO embedded zirconium-doped hafnium oxide high-k film were fabricated, characterized, and compared with those with the single-layer nanocrystalline ZnO embedded sample. Distinct layers of discretely dispersed nanocrystalline dots embedded in the amorphous high-k matrix were observed. The nanocrystalline ZnO dots trap many electrons. The dual-layer sample not only drastically increases the charge storage density but also improves the charge trapping speed due to the coulomb blockade effect. This is a potentially important gate dielectric structure for high density, high speed nonvolatile memories.

• 出版日期2010