科研之友
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摘要
A novel complementary metal-oxide semiconductor (CMOS) current mirror that can work in weak and strong inversion is proposed. The mirror is capable of accurately copying current in the nano-ampere range. The proposed scheme eliminates the DC matching error caused by the difference between drain-to-source voltages of both the input and output transistors. The proposed circuit was verified using ORCAD simulator in 0.8 mu m CMOS process technology. Simulation results confirm the functionality and accuracy of the circuit.
- 出版日期2009
- 单位中国石油大学（北京）
