Depth profiling of fullerene-containing structures by time-of-flight secondary ion mass spectrometry

作者：Drozdov M N^*; Drozdov Yu N; Pakhomov G L; Travkin V V; Yunin P A; Razumov V F

来源：Technical Physics Letters, 2013, 39(12): 1097-1100.

DOI：10.1134/S1063785013120183

A new variant of depth profiling for thin-film fullerene-containing organic structures by the method of time-of-flight (TOF) secondary ion mass spectrometry (SIMS) on a TOF.SIMS-5 setup is described. The dependence of the yield of C-60 molecular ions on the energy of sputtering ions has been revealed and studied. At an energy of sputtering Cs+ ions below 1 keV, the intensity of C-60 molecular ions is sufficiently high to make possible both elemental and molecular depth profiling of multicomponent (multilayer) thin-film structures. Promising applications of TOF-SIMS depth profiling for obtaining more detailed information on the real molecular composition of functional organic materials are shown.

• 出版日期2013-12