Non-contact temperature measurement of silicon wafers based on the combined use of transmittance and radiance

作者：Toyoda Yuki; Seo Tomohiro; Iuchi Tohru^*

来源：Measurement, 2014, 51: 393-399.

DOI：10.1016/j.measurement.2014.02.023

• Transmittance
• Emissivity
• Polarization
• Dielectric film
• Silicon wafer
• Temperature

We propose a non-contact temperature measurement method that combines the temperature dependence of transmittance below 600 degrees C and radiation thermometry above 600 degrees C. The combined method uses a polarization technique and the Brewster angle between air and a dielectric film such as SiO2 or Si3N4 grown on silicon wafers. A prominent feature of this method is that both measurements of transmittance and radiance are performed with the same geometrical arrangement.
For a semitransparent wafer, the measurement of p-polarized transmittance at the wavelengths of 1.1, 1.2 and 1.3 mu m enables temperature measurement in the range from room temperature to 600 degrees C. For an opaque wafer above 600 degrees C, the p-polarized radiation thermometry at the wavelength of 4.5 mu m allows the temperature measurement without the emissivity problem. The combined method with the use of transmittance and radiance is valid in the entire temperature range irrespective of variations of film thickness and resistivity.

• 出版日期2014-5