An Interconnect-Line-Size Optimization Model Considering Scattering Effect

作者：Zhu, Zhangming^*; Wan, Dajing; Yang, Yintang

来源：IEEE Electron Device Letters, 2010, 31(7): 641-643.

DOI：10.1109/LED.2010.2047238

• Bandwidth
• curve fitting
• interconnect line size
• latency
• scattering effect

Based on the impact of the scattering effect on latency and bandwidth, this letter presents the quality-factor model that optimizes latency and bandwidth effectively with consideration of the scattering effect. Then, we get the optimization analytical model with target interconnect linewidth and line spacing by the curve-fitting method. The proposed model has been verified and compared for nanoscale CMOS technology. The optimization model is simple, and we can apply it to the interconnect system optimal design of nano-CMOS integrated circuits.

• 出版日期2010-7
• 单位西安电子科技大学