Stable C20-nSin heterofullerenes (n <= 8): A DFT approach

作者：Momeni M R; Shakib F A^*

来源：Chemical Physics Letters, 2010, 492(1-3): 137-141.

DOI：10.1016/j.cplett.2010.04.051

DFT calculations are applied to devise some stable C20 nSin heterofullerenes with n <= 8. Si atoms are doped at eight selected symmetric positions in such a way that all of them are completely isolated from each other. In contrast to previous reports, none of the computed heterofullerenes collapses to open cage structures. High charge transfer on the surfaces of our stable heterofullerenes provokes further investigations on their possible application for hydrogen storage.

• 出版日期2010-5-26