AlGaN Metal-Semiconductor-Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes

作者：Chen Chin Hsiang^*; Chang Shoou Jinn; Wu Ming Hsien; Tsai Sung Yi; Chien Hsiu Ju

来源：Japanese Journal of Applied Physics, 2010, 49(4): 04DG05.

DOI：10.1143/JJAP.49.04DG05

Al0.16Ga0.84N 320nm near-solar-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs) with a low-temperature AlN (LT- AlN) layer and inductively coupled plasma (ICP) recessed electrodes were successfully fabricated. Compared with the conventional MSM-PDs, it was found that the measured photocurrent was much larger for the MSM-PD with the LT-AlN layer and ICP recessed electrodes. The responsivity of the MSM-PD with the LT-AlN layer and ICP recessed electrodes was also found to be larger, which could be attributed to the ICP-etching-induced photoconductive gain.

• 出版日期2010