An Analytical Model for the Forming Process of Conductive-Bridge Resistive-Switching Random-Access Memory

作者：Lv, Shaoli^*; Wang, He; Zhang, Jinyu; Liu, Jun; Sun, Lingling; Yu, Zhiping

来源：IEEE Transactions on Electron Devices, 2014, 61(9): 3166-3171.

DOI：10.1109/TED.2014.2341274

• Analytic model
• conductive-bridge resistive-switching random-access memory (CBRAM)
• filament growth

An analytical model for the forming process of conductive-bridge resistive-switching random-access memory is developed. The measurable forming time can be calculated using this model giving the biasing condition and is verified to be correct through comparison with the experimental data. The forming time has been shown to have multiple-slopes in exponential dependence on the applied voltage, in agreement with measurement. The model is based on the identification of three steps in the forming process: 1) metal oxidation at the anode; 2) cation migration toward the cathode; and 3) backward filament growth due to electroplating from the cathode. The accuracy of the model has also been established via numerical simulation.

• 出版日期2014-9
• 单位杭州电子科技大学; 清华大学