Diamond thin film grown homoepitaxially on diamond (001) substrate by microwave plasma CVD method studied by reflection high-energy electron diffraction and atomic force microscopy

作者：Takami T^*; Suzuki K; Kusunoki I; Sakaguchi I; Nishitani Gamo M; Ando T

来源：Surface Science, 1999, 440(1-2): 103-115.

DOI：10.1016/S0039-6028(99)00772-4

• atomic force microscopy
• diamond
• chemical vapor deposition
• reflection high-energy electron diffraction
• single crystal epitaxy
• single crystal surfaces

A diamond thin film surface produced homoepitaxially on C(001) substrate by microwave plasma chemical vapor deposition (CVD) has been studied using reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). The RHEED patterns showed C(001)2 x 1/1 x 2 double-domain structure. Wide RHEED patterns with many Kikuchi patterns qualitatively show the high crystallinity of the diamond thin film. The AFM images taken from the same sample with atomic-scale resolution in air showed mostly (001) surface; 2 x I but locally 1 x 1 structure, which is in agreement with the RHEED measurement, although (111) surface was observed rarely. The (111) plane observed rarely was tilted by 15.7 degrees from the (001) substrate, which can be explained by the twinning structure in the thin film. The local 2 x 1 structure on the (111) plane appears by scanning with the AFM tip; tip-induced surface reconstruction.

• 出版日期1999-10-1