Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

作者：Jung Soon Won^*; Choi Jeong Seon; Koo Jae Bon; Park Chan Woo; Na Bock Soon; Oh Ji Young; Lim Sang Chul; Lee Sang Seok; Chu Hye Yong; Yoon Sung Min

来源：Organic Electronics, 2015, 16: 46-53.

DOI：10.1016/j.orgel.2014.08.051

• Flexible
• Organic ferroelectric
• Nonvolatile memory transistor
• Polydimethylsiloxane
• Poly(vinylidene-trifluoroethylene)

The flexible organic ferroelectric nonvolatile memory thin film transistors (OFMTs) were fabricated on polydimethylsiloxane (PDMS) elastomer substrates, in which an organic ferroelectric poly(vinylidene-trifluoroethylene) and an organic semiconducting poly(9,9-dioctylfluorene-co-bithiophene) layers were used as gate insulator and active channel, respectively. The carrier mobility, on/off ratio, and subthreshold swing of the OFMTs fabricated on PDMS showed 5 x 10(-2) cm(2) V-1 s(-1), 7.5 x 10(3), and 2.5 V/decade, respectively. These obtained values did not markedly change when the substrate was bent with a radius of curvature of 0.6 cm. The memory on/off ratio was initially obtained to be 1.5 x 10(3) and maintained to be 20 even after a lapse of 2000 s. The fabricated OFMTs exhibited sufficiently encouraging device characteristics even on the PDMS elastomer to realize mechanically stretchable nonvolatile memory devices.

• 出版日期2015-1