Direct probe of the built-in electric field of Mg-doped a-plane wurtzite InN surfaces with time-resolved electric-field-induced second harmonic generation

作者：Chang Y M^*; Hong Y L; Gwo S

来源：Applied Physics Letters, 2008, 93(13): 131106.

DOI：10.1063/1.2979238

The exceptionally large electron affinity of InN causes the pinning of surface Fermi level well above the conduction band minimum. This unique electronic property leads to the electron accumulation at InN surfaces and a large built-in electric field in the topmost few nanometers of InN surfaces. In this letter, we demonstrate that this surface electric field can be unambiguously determined and monitored in a-plane wurtzite InN surface via time-resolved electric-field-induced second harmonic generation. This finding makes it possible to directly probe and characterize the surface electronic properties of Mg-doped InN with an all-optical technique in ambient environment.

• 出版日期2008-9-29
• 单位清华大学