Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

作者：He, Hongyu^*; Liu, Yuan; Yan, Binghui; Lin, Xinnan; Zheng, Xueren; Zhang, Shengdong

来源：9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), 2018-11-16 To 2018-11-18.

DOI：10.1109/CAD-TFT.2018.8608111

• Amorphous silicon
• polycrystalline silicon
• thin-film transistor
• trap states
• analytical model

Our previous drain current model for the organic and amorphous InGaZnO thin-film transistors is applied to the amorphous and polycrystalline silicon thin-film transistors. In the drain current model, it is assumed that the trapped carrier concentration is much higher than the free carrier concentration considering both deep trap states and tail trap states in the energy gap of the thin film. The model is valid in both subthreshold and above-threshold regime, and is verified by the available experimental data at different temperatures.

• 出版日期2018
• 单位华南农业大学; 华南理工大学; 南华大学; 北京大学