Analysis of the forward and reverse bias I-V and C-V characteristics on Al/PVA:n-PbSe polymer nanocomposites Schottky diode

作者：Tripathi S K^*; Sharma Mamta

来源：Journal of Applied Physics, 2012, 111(7): 074513.

DOI：10.1063/1.3698773

This paper presents the fabrication and characterization of the Al/PVA:n-PbSe Schottky diode. I-V characteristics have been measured at different temperatures in the forward bias. The behavior study of the series resistance (R-S), the ideality factor (n), the effective barrier height (Phi(b)), the Richardson constant (A*), and the leakage current with the temperature have emphasized an inhomogeneity of the barrier height and a tunneling mechanism assisted by traps in the SBD. In C-V measurements, in the reverse bias, the Al/PVA: n-PbSe has been performed as a function of temperature and frequency. The values of barrier height (Phi(C-V)), the built-in-voltage (V-bi) and carrier concentration (N-D) and depletion layer width (W) have been calculated at different temperatures in reverse bias. The barrier inhomogeneities of the Al/PVA: n-PbSe contact has been explained on an assumption of a Gaussian distribution of barrier heights by using the potential fluctuation model.

• 出版日期2012-4-1