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摘要
Diffusion of impurity atoms in solid-phase epitaxially grown silicon layers was studied by back-scattering spectrometry. The samples were amorphized by ion implantation with As and Ge into <100>- and <111>-oriented samples. The amorphized regions were recrystallized by furnace annealing. Asymmetrically enhanced diffusion is observed for <111> samples for both As and Ge. The results are discussed qualitatively in terms of increased point-defect injection at the surface.
- 出版日期1991-3
