AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process

作者：Chakroun Ahmed; Jaouad Abdelatif; Soltani Ali; Arenas Osvaldo; Aimez Vincent; Ares Richard; Maher Hassan^*

来源：IEEE Electron Device Letters, 2017, 38(6): 779-782.

DOI：10.1109/LED.2017.2696946

• Gallium nitride
• HEMTs
• MOSHFETs
• power transistors
• interface states
• hysteresis

In this letter, an AlGaN/GaN MOS-HEMT was demonstrated using a 5-nm-thick SiOx dielectric layer deposited by plasma enhanced chemical vapor deposition (PECVD) as a gate insulator. The fabricated device exhibits a maximum I-DS current of 570 mA/mm at V-GS =+ 3 V, an ON-state resistance (R-bioscon) of 7.3 . mm, a maximum transconductance peak of 180 mS/mm, and a gate leakage current below 1 nA/mm at a gate voltage of +/- 3 V. Moreover, a very low pinchoff voltage (Vp) shift was observedduring theI(DS)-V-GS hysteresis measurements giving an estimated interface state density (D-it) as low as 3.9 x 10(11) cm(-2) eV(-1). These results demonstrate the high quality of the SiOx/AlGaN interface and the efficiency of the passivation process. To the best of our knowledge, this is the lowest reported D-it on an AlGaN/GaNMOS-HEMT device using a PECVD deposition technique.

• 出版日期2017-6