Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

作者：Wang, Yun-Hsiang; Liang, Yung C.^*; Samudra, Ganesh S.; Chang, Ting-Fu; Huang, Chih-Fang; Yuan, Li; Lo, Guo-Qiang

来源：Semiconductor Science and Technology, 2013, 28(12): 125010.

DOI：10.1088/0268-1242/28/12/125010

• FIELD-EFFECT TRANSISTORS
• PIEZOELECTRIC POLARIZATION
• TRANSPORT-PROPERTIES
• ELECTRON-TRANSPORT
• SCHOTTKY BARRIERS
• THRESHOLD VOLTAGE
• WORK FUNCTION
• GAN
• HETEROSTRUCTURES
• SEMICONDUCTORS

This paper reports extensive modelling and analysis of the temperature dependence on the device characteristics of the AlGaN/GaN high electron mobility transistors (HEMTs). A physics-based model is proposed in this study in order to correctly predict the gate flat-band Schottky barrier height, energy band Fermi-level (E-C-E-F) at the AlGaN/GaN interface, two-dimensional electron gas sheet density, gate threshold and (I-D-V-G) at sub-threshold voltages, and drain current-voltage (I-D-V-D) characteristics under various high-temperature conditions. The analytical results are then verified by comparing with the laboratory measurement as well as the numerical results obtained from the Sentaurus TCAD simulation. The proposed model is found to be useful for power electronic device designers on the prediction of the AlGaN/GaN HEMT device performance under high-temperature operation.

• 出版日期2013-12
• 单位清华大学