科研之友
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摘要
The impact of different group-V overpressure schemes on the surface stability of aluminum-, gallium-, and indium-containing binary III-V compounds is examined. The deleterious effect of including arsenic in the overpressure scheme is shown for GaSb, AlSb, InSb, and arsenide-antimonide alloy surfaces using reflection high-energy electron diffraction and cross-sectional transmission electron microscopy. Thermodynamic analysis indicates that the arsenic-for-antimony exchange proceeds only in the direction of increasing the arsenic composition. It is shown that an overpressure scheme containing only antimony results in stable surfaces that are suitable for growth of arsenic-antimony alloys in practical heterostructures.
- 出版日期2013-11
