Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

作者：Khan, Asif Islam^*; Chatterjee, Korok; Duarte, Juan Pablo; Lu, Zhongyuan; Sachid, Angada; Khandelwal, Sourabh; Ramesh, Ramamoorthy; Hu, Chenming; Salahuddin, Sayeef

来源：IEEE Electron Device Letters, 2016, 37(1): 111-114.

DOI：10.1109/LED.2015.2501319

• Negative capacitance
• ferroelectric
• sub-60 mV/decade
• NC-FinFET

We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length L-g = 100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model: Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation.

• 出版日期2016-1