Abrupt barrier contribution to electron spin splitting in asymmetric coupled double quantum wells

作者：Hernandez Cabrera A^*; Aceituno P

来源：Indian Journal of Physics and Proceedings of the Indian Association for the Cultivation of Science, 2015, 89(1): 31-40.

DOI：10.1007/s12648-014-0515-5

• Double quantum well
• Spin
• Abrupt interface
• Photoluminescence excitation

We have studied the behavior of electronic energy spin-splitting of InGaAs-InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 4 x 4 version of the transfer matrix approach that consider contributions from abrupt interfaces and external fields when tunneling through central barrier exists. We have included Lande g-factor dependence on the external applied field. Also, we have calculated electron density of states and photoluminescence excitation. Variations of electron spin-splitting energy lead to marked peculiarities in the density of states. Since the density of states is directly related to photoluminescence excitation, these peculiarities are observable by this technique.

• 出版日期2015-1